Microelectronics Failure Analysis:

applications ASM International backside capacitance capacitor carriers cause CMOS components contamination copper crack cross section cross-section damage defect delamination deposition deprocessing Desk Reference detector dielectric diode edit effect electrical electron beam emission energy etch failing failure analysis failure mechanisms failure mode flip chip Focused Ion Beam function gate oxide heat increase integrated circuit interconnect interface ion beam ISTFA laser latchup layer leakage liquid crystal low-k magnification material measurement MEMS metal Microelectronics Failure Analysis microns microscopy optical package photoemission photon physical plasma polishing polysilicon probe Proc region removed resistance result sample preparation scan scanning electron microscope schematic semiconductor short shown in Figure shows signal silicon solder structure substrate surface techniques temperature Testing and Failure thermal thermography thickness thin tool transistor typically VCSELs wafer waveform wavelength wire bonds x-ray