Investigations on Parallel Operation and Thermal Analysis of Switching Power Semiconductor Devices

A/div active gate drive allow analysis applications balancing calculated capacitance capacitor channel Chapter characteristics common conducted connection controller current mismatch current probes current sharing current waveform cycles delay dependent devices in parallel diode dynamic effects Electronics equivalent circuit error evaluation experimental Fourier Techniques frequency heat sink identical IEEE IGBT 2 IGBT IGBT devices impedance improve increase inductance inductor Infineon Technologies input International inverter junction temperature layout limited load loss manufacturers matching measured method minimal module MOSFET NPT device operation of IGBT output parallel operation parasitic Peak performed period physical PI feedback controller power devices power loss presented primary feedback signal produce pulse quasi-static rated region resistance SaberSketch saturation Semiconductor showing showing VGE shown in Figure Simulation results Source static switching Table thermal turn turn-off turn-on uncontrolled values VCE(on voltage wire