Power Transistors: Device Design and ApplicationsB. Jayant Baliga, Dan Y. Chen IEEE, 1984 - Počet stran: 393 |
Obsah
Introduction | 1 |
On the Proportioning of Chip Area for Multistage Darlington Power Transistors C F Wheatley Jr and W G Einthoven | 35 |
dvdt Effects in MOSFET and Bipolar Junction Transistor Switches R Severns IEEE Power Electronics Specialists Con | 44 |
Autorská práva | |
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amperes AMPS anode current applications base drive bipolar transistor blocking gain breakdown voltage capability capacitance capacitor cathode channel characteristics chopper clamp collector current converter current density current flow Darlington transistors decreases doping drain current drain voltage drive circuit dv/dt effect Electron Devices electron irradiation emitter energy equation Figure forward voltage drop frequency gate bias gate current gate drive gate turn-off Gate Turn-Off Thyristor gate voltage GTO's HEXFET high power hot spot IEEE IEEE Trans increase inductance inductor input integral diode inverter JFET junction layer limit load maximum motor on-resistance on-state operation p-base parameters peak power dissipation power MOSFET power transistors pulse RBSB rectifier region resistance reverse recovery safe operating area second breakdown shown in Fig silicon snubber structure temperature threshold voltage thyristor transconductance triode-like turn-on VDMOS VMOS VOLTS waveforms width zero